GA200TD120U |
RFQ for GA200TD120U Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| GA200TD120U | - | SOP | - |
Features |
| • Generation 4 IGBT technology• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™antiparallel diodes with ultra- soft recovery• Industry standard package• UL approved |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC=25°C | Continuous Collector Current | 200 | A |
| ICM | Pulsed Collector Current | 400 | |
| ILM | Peak Switching Current‚ | 400 | |
| IFM | Peak Diode Forward Current | 400 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| VISOL | RMS Isolation Voltage, Any Terminal To | 2500 | |
| PD @ TC=25°C | Maximum Power Dissipation | 1040 | W |
| PD @ TC=85°C | Maximum Power Dissipation | 540 | |
| TJ | Operating Junction Temperature Range | -40 to +150 | °C |
| TSTG | Storage Temperature Range | -40 to +125 |
| Models | MFG | Pack |
| GA200 | ||
| GA200DD120K | ||
| GA200HD120K | ||
| GA200HS60U | ||
| GA200LD120K | ||
| GA200LS60U | ||
| GA200NS614 | ||
| GA200NS61U | SOP | |
| GA200SA605 | ||
| GA200SA60S | MODULE | |
| GA200SA60U | MODULE | |
| GA200TD120K | ||
| GA200TD120U | SOP | |
| GA200TS25S | ||
| GA200TS60U | ||
| GA201 | ||
| GA202 | ||
| GA20-3H103HB | ||
| GA2119HA | ||
| GA212 |
